Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/10191
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dc.contributor.authorMahesha, M.G.-
dc.contributor.authorBangera, K.V.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-31T08:18:42Z-
dc.date.available2020-03-31T08:18:42Z-
dc.date.issued2009-
dc.identifier.citationMaterials Science in Semiconductor Processing, 2009, Vol.12, 3, pp.89-93en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10191-
dc.description.abstractNano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.en_US
dc.titleCharacterization of p-CdTe/n-CdS hetero-junctionsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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