Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/10866
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dc.contributor.authorSowjanya, V.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:23:14Z-
dc.date.available2020-03-31T08:23:14Z-
dc.date.issued2017
dc.identifier.citationJournal of Alloys and Compounds, 2017, Vol.715, , pp.224-229en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10866-
dc.description.abstractHerein, the thermoelectric properties of vacuum deposited In2Te3 thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 ?V/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 ?Wm?1K?2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes. 2017 Elsevier B.V.en_US
dc.titleEffect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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