Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/10946
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dc.contributor.authorAcharya, S.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:23:25Z-
dc.date.available2020-03-31T08:23:25Z-
dc.date.issued2015
dc.identifier.citationApplied Nanoscience (Switzerland), 2015, Vol.5, 8, pp.1003-1007en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/10946-
dc.description.abstractIn this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. 2015, The Author(s).en_US
dc.titleElectrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctionsen_US
dc.typeArticleen_US
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