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dc.contributor.authorBhatt, A.S.-
dc.contributor.authorBhat, D.K.-
dc.contributor.authorSantosh, M.S.-
dc.date.accessioned2020-03-31T08:30:44Z-
dc.date.available2020-03-31T08:30:44Z-
dc.date.issued2011-
dc.identifier.citationJournal of Electroanalytical Chemistry, 2011, Vol.657, 43862, pp.135-143en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/11013-
dc.description.abstractChitosan-Co3O4 composite films have been prepared by solution casting method. The obtained films have been characterised by XRD and FESEM. The electrical properties of the films are examined by impedance spectroscopy in the temperature range 303-343 K. The impedance plot of the films pronounces the role of temperature in charge-transfer resistance of the composite. Frequency as well as temperature dependencies of dielectric constant and dielectric loss exhibit the general trend followed by carrier dominated dielectrics. Electric modulus parameters give an insight on the ionic conductivity and relaxation phenomena of the composite films. The dielectric parameters along with modulus data have been exploited to discuss the conduction mechanism in the material. The minimum activation energy of 3.9 kJ mol -1 and maximum room temperature conductivity of 1.94 10 -2 S cm-1 were found for composite film with 8% Co 3O4 content. 2011 Elsevier B.V. All rights reserved.en_US
dc.titleElectrochemical properties of chitosan-Co3O4 nanocomposite filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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