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dc.contributor.authorShreekanthan, K.N.-
dc.contributor.authorKasturi, V.B.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-31T08:31:24Z-
dc.date.available2020-03-31T08:31:24Z-
dc.date.issued2003-
dc.identifier.citationIndian Journal of Engineering and Materials Sciences, 2003, Vol.10, 5, pp.433-436en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/11442-
dc.description.abstractSemiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.en_US
dc.titleGrowth and characterization of vacuum deposited cadmium telluride thin filmsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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