Please use this identifier to cite or link to this item:
https://idr.l1.nitk.ac.in/jspui/handle/123456789/11645Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Palimar, S. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:35:24Z | - |
| dc.date.available | 2020-03-31T08:35:24Z | - |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Semiconductors, 2013, Vol.47, 3, pp.422-426 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11645 | - |
| dc.description.abstract | The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 103 ?-1 cm-1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band. 2013 Pleiades Publishing, Ltd. | en_US |
| dc.title | Influence of doping with third group oxides on properties of zinc oxide thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.