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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Fernandes, J.M. | |
| dc.contributor.author | Raveendra, Kiran, M. | |
| dc.contributor.author | Ulla, H. | |
| dc.contributor.author | Satyanarayan, M.N. | |
| dc.contributor.author | Umesh, G. | |
| dc.date.accessioned | 2020-03-31T08:35:34Z | - |
| dc.date.available | 2020-03-31T08:35:34Z | - |
| dc.date.issued | 2014 | |
| dc.identifier.citation | Superlattices and Microstructures, 2014, Vol.76, , pp.385-393 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11764 | - |
| dc.description.abstract | The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. 2014 Elsevier Ltd. All rights reserved. | en_US |
| dc.title | Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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