Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/12486
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dc.contributor.authorShamim, M.Z.M.
dc.contributor.authorPersheyev, S.
dc.contributor.authorZaidi, M.
dc.contributor.authorUsman, M.
dc.contributor.authorShiblee, M.
dc.contributor.authorAli, S.J.
dc.contributor.authorRahman, M.R.
dc.date.accessioned2020-03-31T08:39:23Z-
dc.date.available2020-03-31T08:39:23Z-
dc.date.issued2020
dc.identifier.citationIntegrated Ferroelectrics, 2020, Vol.204, 1, pp.47-57en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12486-
dc.description.abstractSelf-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 m were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10?6 A and low turn-on emission threshold of ?14 V/ m. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. 2019, 2019 Taylor & Francis Group, LLC.en_US
dc.titleMicro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiationen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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