Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

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DC Field	Value	Language
dc.contributor.author	Sadananda, Kumar, N.
dc.contributor.author	Bangera, K.V.
dc.contributor.author	Shivakumar, G.K.
dc.date.accessioned	2020-03-31T08:41:59Z	-
dc.date.available	2020-03-31T08:41:59Z	-
dc.date.issued	2015
dc.identifier.citation	Semiconductors, 2015, Vol.49, 7, pp.899-904	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/12686	-
dc.description.abstract	Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450 C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V 1 s 1, and a hole concentration of 6.25 1017 cm 3. 2015, Pleiades Publishing, Ltd.	en_US
dc.title	Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique	en_US
dc.type	Article	en_US
Appears in Collections:	1. Journal Articles

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