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https://idr.l1.nitk.ac.in/jspui/handle/123456789/13118Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, G.K. | - |
| dc.contributor.author | Bangera, K.V. | - |
| dc.contributor.author | Shivakumar, G.K. | - |
| dc.date.accessioned | 2020-03-31T08:45:16Z | - |
| dc.date.available | 2020-03-31T08:45:16Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.citation | Solid-State Electronics, 2011, Vol.56, 1, pp.100-103 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/13118 | - |
| dc.description.abstract | The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved. | en_US |
| dc.title | Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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