Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/13119
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dc.contributor.authorRao, G.K.-
dc.contributor.authorBangera, K.V.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-31T08:45:16Z-
dc.date.available2020-03-31T08:45:16Z-
dc.date.issued2010-
dc.identifier.citationSolid-State Electronics, 2010, Vol.54, 8, pp.787-790en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/13119-
dc.description.abstractp-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved.en_US
dc.titleStudies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodesen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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