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dc.contributor.authorDevaraj N.
dc.contributor.authorTarafder K.
dc.date.accessioned2021-05-05T10:28:14Z-
dc.date.available2021-05-05T10:28:14Z-
dc.date.issued2020
dc.identifier.citationJournal of Physics Condensed Matter Vol. 33 , 6 , p. -en_US
dc.identifier.urihttps://doi.org/10.1088/1361-648X/abc4ee
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/15848-
dc.description.abstractSpin transport through monolayer and trilayers of molybdenum dichalcogenides were studied considering Co as leads. Detailed investigations of the electronic structure of the Co/MoS2 interface and magnetic tri-junctions are carried out by using density functional theory calculations to understand transport behavior. The study revealed that new spin-polarized hybridized states appeared at the Fermi level due to the formation of Co/MoS2 interface that effectively acted as a spin filter and enhanced the spin injection efficiency of the systems. Spin-polarized current through the system as well as the magnetoresistance (MR) was estimated at different applied bias voltages. Large MR up to 78% was calculated for the trilayer MoS2 system at a relatively high applied bias voltage. The MR values are further improved by tuning the structure of the scattering region. A very large MR of 123% for MoS2/MoSe2/MoS2 trilayer at an applied bias 0.8 V was observed, which is much higher than the previously reported bias dependent MR values in similar systems. © 2020 IOP Publishing Ltd.en_US
dc.titleSpin transport through metal-dichalcogenides layers: a study from first-principles calculationsen_US
dc.typeArticleen_US
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