Please use this identifier to cite or link to this item:
https://idr.l1.nitk.ac.in/jspui/handle/123456789/7533| Title: | Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes |
| Authors: | Rao, K.G. Bangera, K.V. Shivakumar, G.K. |
| Issue Date: | 2011 |
| Citation: | AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602 |
| Abstract: | p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics. |
| URI: | http://idr.nitk.ac.in/jspui/handle/123456789/7533 |
| Appears in Collections: | 2. Conference Papers |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.