Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/8192
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dc.contributor.authorShajahan, E.S.
dc.contributor.authorBhat, M.S.
dc.date.accessioned2020-03-30T10:18:11Z-
dc.date.available2020-03-30T10:18:11Z-
dc.date.issued2018
dc.identifier.citationProceedings of the 2018 8th International Symposium on Embedded Computing and System Design, ISED 2018, 2018, Vol., , pp.251-255en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8192-
dc.description.abstractThis work presents low loss RF-MEMS Single Pole Four Throw (SP4T) switch for X band. The present work is inspired from the fact that electrostatically actuated RF MEMS switches have superior RF performance over the state-of-the-art solid-state switches. Since an optimized design for Single Pole Multi Throw (SPMT) switch is difficult to realize, this work proposes a new design to achieve low loss and high isolation. The idea is to realize a combination of SPST (Single-Pole-Single-Throw) series and shunt switching in each arm of the SP4T model. The actuation voltage, isolation and insertion losses are optimized. The electro-mechanical modeling of the proposed device is done in CoventorWare and electro-magnetic modeling in HFSS. The simulation of the proposed design shows an actuation voltage of 12 V for capacitive shunt configuration and 13.75 V for the lateral series switch. The insertion loss and isolation are better than 1 dB and -50 dB respectively in the X band. The excellent RF characteristics make the switches suitable as MEMS varactors for high frequency applications and in tunable MEMS filters and phaseshifters. � 2018 IEEE.en_US
dc.titleHigh Isolation Single Pole Four Throw RF MEMS Switches for X banden_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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