Please use this identifier to cite or link to this item: https://idr.l1.nitk.ac.in/jspui/handle/123456789/13610
Title: ZnxCd1-xS thin films: A study towards its application as a reliable photodetector
Authors: Barman, B.
Bangera, K.V.
Shivakumar, G.K.
Issue Date: 2020
Citation: Superlattices and Microstructures, 2020, Vol.137, , pp.-
Abstract: A reliable and stable photodetector shows enormous potential applications in health monitoring, intelligent wearable devices, and biological sensing. The noble opto-electrical properties of cadmium sulfide (CdS) makes it a favorable semiconductor for opto-electrical devices. The properties of CdS thin film can further be enhanced by alloying it with zinc sulfide (ZnS) to form ZnxCd1-xS compound semiconductor. Herein, a high performance, ZnxCd1-xS (x = 0, 0.15, 0.30, and 0.45) photodetector with good stability is designed and fabricated via a simple vacuum thermal evaporation technique. The various photodetector parameters of the ZnxCd1-xS films were investigated as a function of its composition. Among the various compositions of the ZnxCd1-xS thin films, the Zn0.15Cd0.85S films displayed excellent photosensitivity as high as 2.22 which is ~1.6 times higher than that of undoped CdS thin films. The research data suggests that a high-performance single layer ZnxCd1-xS photodetector with good stability and reproducibility can be fabricated using a thermal evaporation technique. � 2019 Elsevier Ltd
URI: 10.1016/j.spmi.2019.106349
http://idr.nitk.ac.in/jspui/handle/123456789/13610
Appears in Collections:1. Journal Articles

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